Independent closed loop control of di/dt and dv/dt for high power IGBTs

As the insulated gate bipolar transistor (IGBT) modules have their own specific characteristic switching forms, turn-on and turn-off times are changed according to practical applications. For conventional drives, resistors used adjust which change losses that a significant amount in total losses. Collector current rate of change, $di_{C}/ dt$ collector-emitter $dv_{CE}/ dependent on each other they affect operating parameters high power converters. Relations between voltages during transitions given effects changes electrical for operation IGBT described. Thereafter, closed-loop drive with analog control performs independent new generation module platform applications is proposed. Unlike proposed makes constant possible while decreased increase efficiency conversion system. This leads decrease without changing electromagnetic interference (EMI), voltage, stresses related collector current. Simulations performed double pulse test circuit package next density dual (nHPD$^{2}$) family MBM450FS33F Hitachi 3300V 450A ratings modelled.